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| (R) STN3NE06L N - CHANNEL 60V - 0.10 - 3A - SOT-223 STripFETTM POWER MOSFET PRELIMINARY DATA TYPE STN3NE06L s s s s s V DSS 60 V R DS(on) < 0.120 ID 3A TYPICAL RDS(on) = 0.10 EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION 2 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature SizeTM " stip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL (DISK DRIVES,etc.) s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION 1 SOT-223 2 3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM (*) Ptot dv/dt(1) T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o Value 60 60 20 3 1.8 12 2.5 0.02 6 -65 to 150 150 (1) ISD 12 A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX Unit V V V A A A W W/ o C V/ns o o C C (*) Pulse width limited by safe operating area New RDS (on) spec. starting from JULY 98 August 1998 1/5 STN3NE06L THERMAL DATA R thj-pcb R thj-amb Tl Thermal Resistance Junction-PC Board Max Thermal Resistance Junction-ambient Max (Surface Mounted) Maximum Lead Temperature For Soldering Purpose 50 60 260 o o C/W C/W o C AVALANCHE CHARACTERISTICS Symbol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , VDD = 25 V) Max Value 3 20 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A VGS = 0 Min. 60 1 10 100 Typ. Max. Unit V A A nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating o C Gate-body Leakage Current (V DS = 0) V GS = 20 V T c = 125 I GSS ON () Symbol V GS(th) R DS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance V DS = VGS Test Conditions ID = 250 A Min. 1 Typ. 1.7 0.080 0.1 Max. 2.5 0.100 0.12 Unit V V GS = 10 V I D = 6A V GS = 5 V I D = 6A ID(on) On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V 3 A DYNAMIC Symbol g fs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 25 V f = 1 MHz I D = 1.5 A V GS = 0 V Min. 1 Typ. 3 700 100 30 960 140 45 Max. Unit S pF pF pF 2/5 STN3NE06L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt)on Qg Q gs Q gd Parameter Turn-on Time Rise Time Turn-on Current Slope Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions V DD = 30 V R G = 4.7 V DD = 25 V R G = 4.7 V DD = 40 V ID = 6 A V GS = 5 V ID = 6 A V GS = 10 V I D = 12 A V GS = 5 V Min. Typ. 17 35 200 13 6 5 18 Max. 23 50 Unit ns ns A/s nC nC nC SWITCHING OFF Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 48 V R G = 4.7 I D = 12 A V GS =5 V Min. Typ. 9 18 30 Max. 12 25 45 Unit ns ns ns SOURCE DRAIN DIODE Symbol I SD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 3 A I SD = 12 A V DD = 25 V V GS = 0 di/dt = 100 A/s T j = 150 o C 65 0.13 4 Test Conditions Min. Typ. Max. 3 12 1.5 Unit A A V ns C A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area 3/5 STN3NE06L SOT-223 MECHANICAL DATA mm MIN. a b c d e1 e4 f g l1 l2 L 2.9 0.67 6.7 3.5 6.3 3 0.7 7 3.5 6.5 2.27 4.57 0.2 0.63 1.5 TYP. 2.3 4.6 0.4 0.65 1.6 MAX. 2.33 4.63 0.6 0.67 1.7 0.32 3.1 0.73 7.3 3.7 6.7 114.2 26.4 263.8 137.8 248 118.1 27.6 275.6 137.8 255.9 MIN. 89.4 179.9 7.9 24.8 59.1 mils TYP. 90.6 181.1 15.7 25.6 63 MAX. 91.7 182.3 23.6 26.4 66.9 12.6 122.1 28.7 287.4 145.7 263.8 DIM. L l2 e1 a b f d c e4 C l1 B C E g P008B 4/5 STN3NE06L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . 5/5 |
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